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| P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 450 Volt VDS * RDS(on)=150 ZVP0545A D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg E-Line TO92 Compatible VALUE -450 -45 -400 20 UNIT V mA mA V mW C 700 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) SYMBOL MIN. BVDSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf 40 120 20 5 10 15 15 20 -100 150 -450 -1.5 -4.5 20 -20 -2 MAX. UNIT CONDITIONS. V V nA mA mA A ID=-1mA, VGS=0V ID=-1mA, VDS= VGS VGS= 20V, VDS=0V VDS=-450 V, VGS=0 VDS=-360 V, VGS=0V, T=125C(2) VDS=-25 V, VGS=-10V VGS=-10V,ID=-50mA VDS=-25V,ID=-50mA mS pF pF pF ns ns ns ns VDS=-25 V, VGS=0V, f=1MHz VDD -25V, ID=-50mA (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. 3-413 ( 3 |
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